Semiconductor circuit containing integrated bipolar and mos...

Details Semiconductor circuit containing integrated bipolar and mos... Semiconductor circuit containing integrated bipolar and mos...

H - Electricity

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356/127

H01L 27/02 (2006.01) H01L 21/8249 (2006.01) H01L 27/06 (2006.01) H01L 29/45 (2006.01) H01L 29/49 (2006.01)

Patent

CA 1203641

ABSTRACT OF THE DISCLOSURE Integrated semiconductor circuits with at least one bipolar transistor (17) and at least one MOS field effect transistor (18) on a chip wherein contacts from a metal interconnect level to diffused active emitter (8) and collector (5) regions of the bipolar transistor (17) as well as the gate electrode (9) of the MOS transistor are composed of a high melting point silicide, such as tantalum, tungsten, molybdenum or titanium silicide, are disclosed, along with a method of producing such circuits. In addition to achieving independence from a metallization grid and achieving low-resistance wiring, the use of the silicide, in conjunction with the high temperature stability of silicides, enables its simultaneous use as an implantation mask. The invention allows the production of bipolar/MOS components on a chip without added outlay.

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