G - Physics – 11 – C
Patent
G - Physics
11
C
356/12, 356/199,
G11C 5/06 (2006.01) G11C 5/00 (2006.01) G11C 5/04 (2006.01) H01L 25/10 (2006.01)
Patent
CA 1229411
Stacked Double Density Memory Module Using Industry Standard Memory Chips Abstract A stacked double density memory module may be formed from two industry standard memory chips, by jumpering the no-connect and chip enable pins on one chip and then stacking the jumpered chip on the other chip with the pins on the jumpered (top) chip contact- ing the corresponding pins on the other (bottom) chip except for the chip select pins. In a preferred embodiment for use with 64K or one megabit DRAMs, the top chip is jumpered with a U-shaped strap which runs from the no-connect pin to the chip enable pin. The chip enable pin is bent toward the chip body to retain the strap in place. The technique may also be employed for stacking other industry standard memory or array chips.
473184
Mueller Wolfgang F.
Spencer Gwynne W. II
International Business Machines Corporation
Saunders Raymond H.
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