Power switching circuitry

H - Electricity – 03 – K

Patent

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328/194, 323/4

H03K 17/284 (2006.01) H03K 17/30 (2006.01) H03K 17/567 (2006.01) H03K 17/72 (2006.01)

Patent

CA 1236879

Abstract A four-layer insulated-gate-controlled semiconductor device has a range of anode-cathode currents over which gate control potentials will extinguish such anode-cathode current. Coupling circuitry for limiting the rate of change of turn-off gate control potential to the gate of the device enhances the range of anode-cathode current over which control is maintained.

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