C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
345/26, 117/85
C23C 16/22 (2006.01) C23C 16/452 (2006.01) H01L 21/205 (2006.01)
Patent
CA 1323528
ABSTRACT OF THE DISCLOSURE A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor deposition method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.
526329
Hanna Jun-Ichi
Ishihara Shunichi
Shimizu Isamu
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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