H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/171
H01L 29/72 (2006.01) H01L 21/203 (2006.01) H01L 21/316 (2006.01) H01L 21/318 (2006.01) H01L 23/532 (2006.01) H01L 29/423 (2006.01)
Patent
CA 1192668
ABSTRACT The present invention relates to a bipolar transistor and its fabrication method. It concerns an improvement in self-aligned planar transistors and fabrication process therefor. The surface of a base- emitter junction is covered and protected by a direct nitrided film of silicon nitride. The base contact electrode is made of highly doped polysilicon, the surface of which is thermally oxidized to form a silicon dioxide layer, which terminates on the surface of the silicon nitride film and separates the base contact electrode from the emitter contact electrode. The process for fabricating the transistor by the present invention utilizes an over etching of silicon dioxide film. The base, emitter and their contact electrodes are self-aligned by use of only one pattern lithographically fabricated on a stack of silicon nitride films and a silicon dioxide film.
439475
Fetherstonhaugh & Co.
Fujitsu Limited
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