Method for forming deposited film

Details Method for forming deposited film Method for forming deposited film

C - Chemistry, Metallurgy

23

C

117/85, 117/86,

C23C 16/22 (2006.01) C23C 16/42 (2006.01) C23C 16/44 (2006.01) C23C 16/452 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1315614

ABSTRACT OF THE DISCLOSURE A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substarte existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

521129

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