Metal organic vapor phase epitaxial growth of group iii-v...

Details Metal organic vapor phase epitaxial growth of group iii-v... Metal organic vapor phase epitaxial growth of group iii-v...

H - Electricity

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L

148/2.4

H01L 21/20 (2006.01) C30B 25/02 (2006.01)

Patent

CA 1313343

ABSTRACT METHOD ORGANIC VAPOR PHASE EPITAXIAL GROWTH OF III-V SEMICONDUCTOR MATERIALS This invention is directed to a method of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) of Group III-V compound semiconductors in a hot wall reactor. Epitaxy is accomplished by use of precursors having a metal, an organic ligand, and an inorganic ligand. The system is operated at very low pressures to provide a high throughput of wafers and a highly uniform deposition growth. The invention is further directed to the use of the class of precursors to selectively grow III-V compounds on a masked substrate, wherein growth occurs epitaxially on the exposed areas of the substrate but not on the surrounding mask.

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