Semiconductor device with improved turn-off capability

Details Semiconductor device with improved turn-off capability Semiconductor device with improved turn-off capability

H - Electricity

01

L

356/149, 356/161

H01L 29/74 (2006.01) H01L 29/745 (2006.01)

Patent

CA 1200327

ABSTRACT OF THE DISCLOSURE A four-region semiconductor device (that is, a p-n-p-n or n-p-n-p device) including at least one further region utilizes integral FET structure for diverting carriers away from an interior region of the device and shunting them to a main current- carrying electrode of the device, whereby the device is provided with a turn-off capability. The device requires only a small amount of energy for its turn- off control gate, and utilizes a high percentage of its semiconductor body for carrying current through the device. High speed turn-off is achieved in a particular embodiment of the device.

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