Semiconductor device having rapid removal of majority...

Details Semiconductor device having rapid removal of majority... Semiconductor device having rapid removal of majority...

H - Electricity

01

L

356/161

H01L 21/20 (2006.01) H01L 29/42 (1985.01)

Patent

CA 1200018

SEMICONDUCTOR DEVICE HAVING RAPID REMOVAL OF MAJORITY CARRIERS FROM AN ACTIVE BASE REGION THEREOF AT DEVICE TURN-OFF AND METHOD OF FABRICATING THIS DEVICE Abstract of the Invention A semiconductor device comprising a bulk substrate and an epitaxial layer grown thereon attains the feature of rapid removal of majority carriers from an N-type active base region thereof, a function conventionally performed by anode shorts, through the incorporation into the otherwise P-type substrate of a highly doped, N-type region having a surface in contact with the N-type epitaxial layer for injecting majority carriers from an N-type active base region in the epitaxial layer into the remaining P-type portion of the substrate.

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