Thin film field effect transistor

H - Electricity – 01 – L

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356/149

H01L 21/84 (2006.01) H01L 21/34 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1308495

Abstract A method of manufacture of thin film, field-effect transistors formed on a transparent substrate and with transparent, conductive source and drain electrodes, uses initially deposited gate electrodes as a mask in association with photolithographic processing using radiation transmitted through the substrate and electrodes to minimise parasitic capacitance between the gate and source and drain electrodes.

576741

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