Complementary heterostructure semiconductor device

Details Complementary heterostructure semiconductor device Complementary heterostructure semiconductor device

H - Electricity

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L

356/125

H01L 27/04 (2006.01) H01L 21/8252 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1299298

YO987-015 COMPLEMENTARY HETEROSTRUCTURE SEMICONDUCTOR DEVICE Abstract of the Disclosure Semiconductor heterostructure technology is provided wherein parallel quantum well interfaces serially removed from a surface having one device area adjacent one quantum well interface and another device area vertically displaced and adjacent another quantum well interface providing a direct connected complementary switching device integrated circuit. An eight layer alternating GaA1As/GaAs substrate is provided with a vertical differentiation of the device areas on the surface such that alternate wide and narrow band gap layers are adjacent different areas for the fabrication of complementary quantum well channel field effect transistors wherein the quantum well interface for one conductivity type channel device extends under the quantum well interface for the opposite conductivity type channel device and does not interfere with it. .

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