Device having semi-insulating indium phosphides based...

Details Device having semi-insulating indium phosphides based... Device having semi-insulating indium phosphides based...

C - Chemistry, Metallurgy

30

B

356/141, 356/149

C30B 29/40 (2006.01) C30B 25/02 (2006.01)

Patent

CA 1210526

- 16 - DEVICE HAVING SEMI-INSULATING INDIUM PHOSPHIDE BASED COMPOSITIONS Abstract This invention concerns a method for producing devices having semi-insulating indium phosphide-based materials, such as lasers, single or in an array, field effect transistors, and integrated optoelectronic circuits. The inventors have found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1 x 109 ohm-cm have been achieved as compared to resistivities on the order of 5 x 103 ohm-cm for other types of semi-insulating epitaxial indium phosphide.

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