Integrated circuit having laser-alterable metallization layer

Details Integrated circuit having laser-alterable metallization layer Integrated circuit having laser-alterable metallization layer

H - Electricity

01

L

356/148

H01L 21/461 (2006.01) H01L 21/768 (2006.01) H01L 23/525 (2006.01)

Patent

CA 1304831

INTEGRATED CIRCUIT HAVING LASER-ALTERABLE METALLIZATION LAYER ABSTRACT OF THE DISCLOSURE An integrated circuit and a method of altering such an integrated circuit (e.g., during final testing of the circuit) are disclosed. The method can be used to program a circuit, wire around defective portions of a circuit, or otherwise permanently alter a circuit by employing a directed energy source such as a laser to sever electrical paths in an upper layer of metallization in an integrated circuit. The integrated circuit comprises a laminated upper metallization layer, the upper layer(s) of which laminate are removed from the laser-alterable lower layer at selected locations in the metallization layer to provide laser-alteration sites in the circuit. In a pre- ferred embodiment, the upper metallization layer comprises a two-layer laminate including an upper, relatively thick layer of an aluminum/silicon alloy and a lower, relatively thin layer of titanium nitride.

593598

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