Deep-uv lithography

G - Physics – 01 – N

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356/176, 356/192

G01N 21/86 (2006.01) G03F 7/20 (2006.01)

Patent

CA 1269765

Abstract: The present invention relates to a method and apparatus for defining fine-line features on a wafer. The method comprises the steps of generating narrow-bandwidth laser pulses and directing the pulses via a lens and scanning assembly to form a variable-size variable-shape virtual source composed of the multiple pulses. The method further includes relaying the virtual source through a reticle pattern to illuminate a substantial portion of the entrance pupil of a diffraction-limited low-loss projection lens made of a single optical material, and directing the reticle pattern via the projection lens onto the surface of the wafer. The apparatus comprises a laser that inherently is characterized by a relatively wide bandwidth and a lens assembly disposed in the path of radiation from the laser which exhibits unacceptably large chromatic aberrations in response to the relatively wide bandwidth. A unit is provided for sufficiently narrowing the bandwidth of the radiation to cause the assembly to exhibit acceptably low chromatic aberrations.

579702

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