Method of making a silicon nitride body from the...

Details Method of making a silicon nitride body from the... Method of making a silicon nitride body from the...

C - Chemistry, Metallurgy

04

B

25/128

C04B 35/50 (2006.01) C04B 35/584 (2006.01)

Patent

CA 1234679

-15- ABSTRACT A method is disclosed of making a fully dense silicon nitride comprising object by heating a silicon nitride mixture containing yttrium silicon oxynitride (at least 75% Y10Si6O24N2) to full density without the need for special atmospheres or packing mediums. A reaction bonded silicon nitride/yttrium silicon oxynitride comprising object is fabricated to have the oxynitride present in an amount of 5-17% by weight of the object, free silicon and other oxides in an amount up to .5%, and the remainder essentially silicon nitride. The object is heated in an ambient atmosphere to a temperature below the sublimation temperature of silicon ntiride and for a period of time to fully densify the object as a result of solution of the silicon nitride into liquified oxynitride, the object being in direct contact with the ambient atmosphere during heating.

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