Method for making an integrated injection logic structure...

Details Method for making an integrated injection logic structure... Method for making an integrated injection logic structure...

H - Electricity

01

L

356/30

H01L 21/22 (2006.01)

Patent

CA 1170783

ABSTRACT OF THE DISCLOSURE An integrated injection logic device is formed in a pocket of semi- conductor material surrounded by oxide isolation, and separated from a sub- strate by an intervening region of opposite conductivity, The steps for forming the integrated injection logic device include depositing a first material which includes a first conductivity type impurity over a first portion of the epitaxial layer, treating the first material to cause at least some of the first conduc- tivity type impurity to enter the epitaxial layer, and introducing an opposite conductivity type impurity into a second portion of the epitaxial layer. Typically, the first material is polycrystalline silicon doped with P conduct- ivity type impurity.

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