Insulating film for semiconductor, production of the same...

Details Insulating film for semiconductor, production of the same... Insulating film for semiconductor, production of the same...

H - Electricity

01

L

402/13, 117/187,

H01L 23/28 (2006.01) H01L 21/312 (2006.01) H01L 23/29 (2006.01)

Patent

CA 1281840

Abstract: The invention relates to an insulating film for a semiconductor. The film comprises a cured product of a siloxane prepolymer produced by hydrolyzing and polycondensing (a) a tetraalkoxysilane of the formula: Si(OR1)4 (I) (b) an alkyl- or aryl-trialkoxysilane of the formula: R2Si(OR3)3 (II) (c) a dialkyl- or diaryl-dialkoxysilane of the formula: R2R5Si(OR6)2 (III) in a molar ratio of (a):(b):(c) of 0.14-0.50 : 0.03-0.66 : 0.11-0.66, wherein R1 to R6 may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 10 carbon atoms. The insulating film has good crack resistance, adhesivity to a substrate and surface evenness.

525615

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