H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/182
H01L 21/223 (2006.01) H01L 21/225 (2006.01)
Patent
CA 1217880
PROCESS FOR DIFFUSING IMPURITIES INTO A SEMICONDUCTOR BODY ABSTRACT OF THE DISCLOSURE A process for diffusing a dopant into a III-V type semiconductor body is disclosed which comprises: a) placing in a heating chamber which is substantially devoid of any oxidizing substance a deposition substrate possessing a dopant-containing layer which has been vapor deposited upon a major surface thereof in contact with, or in the proximity of, an object substrate fabricated from a III-V type semiconductor material with the dopant-containing layer of the deposition substrate being substantially opposed to a major surface of the object substrate; b) introducing into the heating chamber a source of Group V element corresponding to the Group V element of the object substrate, said source being capable of providing Group V element in the vapor phase at the diffusion temperature with the vapor pressure of the vapor phase Group V element being at or above the equilibrium vapor pressure of the Group V element present at the surface of the object substrate; and, c) heating the deposition substrate and the object substrate to the diffusion temperature for a period of time sufficient to diffuse a predetermined amount of dopant into the object substrate to a predetermined depth therein.
499174
Hovel Harold J.
Mckoy Thermon E.
International Business Machines Corporation
Rosen Arnold
LandOfFree
Process for diffusing impurities into a semiconductor body does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for diffusing impurities into a semiconductor body, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for diffusing impurities into a semiconductor body will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1302366