Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

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345/32

H01S 5/227 (2006.01) H01S 3/06 (2006.01) H01S 5/20 (2006.01) H01S 5/32 (2006.01)

Patent

CA 1218136

Abstract of the Disclosure: A semiconductor laser device has an optical confinement region consisting of first, second, third and fourth semiconductor layers provided on the upper part of a substrate successively in contact with each other. The first and fourth layers are smaller in refractive index than the second and third layers. The third layer is larger in refractive index than the second layer. The second and fourth layers are larger in forbidden band width than the third layer. At least the first and fourth layers are opposite in conductivity type to each other. This optical confinement region is formed into a mesa-stripe, both side walls of which that extend substantially parallel to the traveling direction of a laser beam being embedded with a fifth semiconductor layer. The width of the second layer in a section perpen- dicular to the traveling direction of the laser beam and in the direction parallel to a junction within the optical con- finement region is made larger than that of the third layer. The result is a device that simultaneously provides a high output and a stabilized transverse mode of oscillation.

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