H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/128
H01L 27/08 (2006.01) H01L 21/033 (2006.01) H01L 27/07 (2006.01) H01L 29/06 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01)
Patent
CA 1204221
ABSTRACT An MOS semiconductor device comprises a semiconductor substrate and a gate electrode formed on a principal face of the substrate with an insulating oxide film therebetween. A source region is formed in the substrate to one side of the gate electrode and a drain region is formed in the substrate at a location on the opposite side of the gate electrode to the source region. A pair of pinch-off resistor regions in which pinch-off occurs, extend inwardly from the source region and the drain region, respectively, towards the gate electrode, and a channel extends between the source and drain regions. The length of the channel between the drain region and the source region is greater than the width of the channel measured in a direction perpendicular to the channel length. The source region and drain region are located in isolation from a channel stopper region surrounding the device. The device is useful in an output buffer circuit for direct driving of a high breakdown load, such as a fluorescent indicator lamp, and the formation of the pinch-off regions in the above manner provides a large resistance for a small area. Thus, the device is particularly suited to IC fabrication.
415181
Borden Ladner Gervais Llp
Matsushita Electric Industrial Co. Ltd.
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