Sintered silicon carbide ceramic body of high electrical...

Details Sintered silicon carbide ceramic body of high electrical... Sintered silicon carbide ceramic body of high electrical...

C - Chemistry, Metallurgy

04

B

261/6

C04B 35/56 (2006.01) C04B 35/565 (2006.01) H01B 3/12 (2006.01) H01L 23/14 (2006.01) H01L 23/15 (2006.01)

Patent

CA 1267915

SINTERED SILICON CARBIDE CERAMIC BODY OF HIGH ELECTRICAL RESISTIVITY ABSTRACT Sintered silicon carbide body having a D.C. electrical resistivity of at least 108 Ohm cm at 25°C a density of at least 2.95 g/cm3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250°C or greater, a shaped body composed essentially of carbon or carbon source material an amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide up to 25 percent of temporary binder and a balance of silicon carbide which is predominately alpha-phase. The shaped body may additionally include other sintering aids such as BN or Al without destruction of desired high electrical resistivity.

518216

Affiliated with

Also associated with

Rating

Sintered silicon carbide ceramic body of high electrical... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sintered silicon carbide ceramic body of high electrical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sintered silicon carbide ceramic body of high electrical... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1303450