Method for epitaxial growth from the vapour phase of...

Details Method for epitaxial growth from the vapour phase of... Method for epitaxial growth from the vapour phase of...

H - Electricity

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H01L 21/205 (2006.01) C30B 25/10 (2006.01) C30B 25/16 (2006.01) C30B 25/18 (2006.01) H01L 21/365 (2006.01)

Patent

CA 1296241

PHF 85607 12 29-10-1986 ABSTRACT: Reactor chamber for epitaxial growth from the vapour phase of semiconductor materials. A method for carrying out epitaxial growth from the vapour phase of layers of semiconductor materials on semiconductor substrates, in a chamber being mainly constituted by a tube containing a susceptor for the substrate, in which tube gaseous components are circulated from one end to the other at a pressure and a temperature suitable to obtain the epitaxial growth of the mono- crystalline layers on the substrate. The temperature of the wall of the chamber opposite to the susceptor, this wall being designated as the ceiling of the chamber is regulated, to produce variations of the deposition profile of the epitaxial layer formed on the substrate. Application: manufacture of discrete components of III-V semiconductor materials. Reference: Fig. 1.

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