G - Physics – 11 – C
Patent
G - Physics
11
C
352/40
G11C 17/00 (2006.01) G11C 7/14 (2006.01) G11C 11/34 (2006.01) G11C 16/28 (2006.01) G11C 17/18 (2006.01)
Patent
CA 1171527
PHA 1048 13 12-3-1981 ABSTRACT: "Semiconductor memory array." An improved read-only memory arrangement for generating a differential output signal within the memory array (11) itself incorporates a column of reference cell translators (16) and a single reference bit line (13) within the same general area occupied by the memory cell transistors (10) and memory main bit lines (12). Each word line is coupled to the gate of one of the reference cell transistors (16) as well as to the gates of the memory cell transistors (10) lying in the same row. The reference bit line voltage is maintained substantially midway between the high and low potential levels of the main bit lines to produce a differential output voltage for sensing pur- poses.
379548
N.v. Philips Gloeilampenfabrieken
Van Steinburg C.e.
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