Semiconductor device having a protection circuit

Details Semiconductor device having a protection circuit Semiconductor device having a protection circuit

H - Electricity

01

L

356/162, 356/66

H01L 29/36 (2006.01) H01L 27/02 (2006.01)

Patent

CA 1204524

ABSTRACT The protection circuit for inner elements such as metal insulator semiconductor (MIS) field effect transistors in a semiconductor device of high packing density has been improved. The protection circuit comprises protective elements of two types. The first one has a deep diffusion region providing the element with high surge capacity (an ability to withstand incoming surge energy) and the other one has a shallow diffusion region providing a low breakdown voltage. With the combination of these protective elements of two different types, the protection cir- cuit can withstand a high input surge energy and, at the same time, provide a low protection voltage suitable to protect the inner elements from breakdown.

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