H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/177, 117/64
H01L 21/28 (2006.01) G03F 7/00 (2006.01) G03F 7/09 (2006.01) H01L 21/027 (2006.01) H01L 21/8234 (2006.01)
Patent
CA 1251363
ABSTRACT: A method of manufacturing a semiconductor device comprising the steps of forming a first film along the upper surface of a substructure and covering a por- tion of the first film with a patterned second film. The uncovered portion of the first film and a contiguous part of the covered portion is removed whereby a portion of the patterned second film overhangs the remainder of the first film. A photosensitive layer is formed on at least the surface of the substructure where the material of the first film has been removed and then the photosensitive layer is exposed and removed except for the portion under the overhanging portion of the patterned second film. The remaining material of the first and second film is then removed to form a portion of material having a very narrow width.
525624
Fetherstonhaugh & Co.
N.v.philips'gloeilampenfabrieken
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