Method and apparatus having rf biasing for sampling a plasma...

Details Method and apparatus having rf biasing for sampling a plasma... Method and apparatus having rf biasing for sampling a plasma...

H - Electricity

01

J

358/9

H01J 49/04 (2006.01) H01J 49/10 (2006.01)

Patent

CA 1246246

TITLE: METHOD AND APPARATUS HAVING RF BIASING FOR SAMPLING A PLASMA INTO A VACUUM CHAMBER ABSTRACT OF THE DISCLOSURE A plasma generated within an induction coil is sampled through a sampler orifice into a first vacuum chamber stage and then through a skimmer orifice into a second vacuum chamber stage for mass analysis of trace ions in the plasma. Arcing at the orifices is reduced or prevented by applying, to the plates containing the ori- fices, an RF bias voltage derived from the generator which powers the coil. Since optimum ion transmission is highly dependent on the phase and amplitude of the RF bias, phase and amplitude adjustment networks are pro- vided to optimize the ion count. Alternatively, arcing at the sampler orifice can be eliminated by grounding the induction coil at or near its center and the RF bias can be applied only to the plate containing the skimmer ori- fice.

479934

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