Polycrystalline silicon schottky diode array

Details Polycrystalline silicon schottky diode array Polycrystalline silicon schottky diode array

G - Physics

11

C

356/153, 352/82

G11C 17/00 (2006.01) H01L 21/338 (2006.01) H01L 21/84 (2006.01) H01L 23/528 (2006.01) H01L 27/102 (2006.01) H01L 29/04 (2006.01) H01L 29/872 (2006.01)

Patent

CA 1174772

POLYCRYSTALLINE SILICON SCHOTTKY DIODE ARRAY ABSTRACT OF THE DISCLOSURE A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read-only memories and programmable logic arrays, and allows fabrication of Schottky diodes more compactly than previous structures.

395990

Affiliated with

Also associated with

Rating

Polycrystalline silicon schottky diode array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polycrystalline silicon schottky diode array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline silicon schottky diode array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1313373