Method of preferentially etching optically flat mirror...

H - Electricity – 01 – L

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149/6

H01L 21/308 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1170550

- 16 - METHOD OF PREFERENTIALLY ETCHING OPTICALLY FLAT MIRROR FACETS IN InGaAsP/InP HETEROSTRUCTURES Abstract of the Disclosure Highly reproducible, optically flat mirror facets are created by etching a predetermined area of the InGaAsP/InP heterostructure system to expose a crystallographic surface throughout the entire heterostructure system. Contact of the exposed surface with HCl causes a preferred crystallographic plane to be exposed as an optically flat mirror facet.

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