Thick bus metallization interconnect structure to reduce bus...

Details Thick bus metallization interconnect structure to reduce bus... Thick bus metallization interconnect structure to reduce bus...

H - Electricity

01

L

356/134

H01L 27/04 (2006.01) H01L 21/768 (2006.01) H01L 23/528 (2006.01)

Patent

CA 1249070

ABSTRACT OF THE DISCLOSURE There is disclosed a structure for self aligned and non self aligned power and ground buses and interconnects for integrated circuits which are thicker than normal conductors. This enables them to withstand higher current densities without adverse electromigration effects. There is also disclosed a method for making such structures.

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