Method of making ultrapure silicon nitride/oxynitride powder

Details Method of making ultrapure silicon nitride/oxynitride powder Method of making ultrapure silicon nitride/oxynitride powder

C - Chemistry, Metallurgy

04

B

261/1

C04B 35/58 (2006.01) C04B 35/584 (2006.01) C04B 35/593 (2006.01)

Patent

CA 1256458

-20- Abstract A method is disclosed for making a fusable, one component silicon nitride powder, a powder mixture of (a) silicon nitride precursor (e.g., Si(NH)2) possessing silicon-nitrogen and nitrogen-hydrogen bonds having a purity of equal to or greater than 99.98% and having a fine particle size; and (b) a silicon oxynitride agent having a purity equal to or greater than 99.98% and effective as a sintering aid, said mixture is heated. The heating is carried out in a nonoxidizing atmosphere to a temperature effectively below the fusion temperature of the mixture (e.g., 1150-1350°C) and for a period of time of no greater than eight hours but sufficient to chemically convert the mixture to grains of silicon nitride bonded and encapsulated by crystallite silicon oxynitride. The fusable powder can then be mixed with silicate forming oxides and subjected to forming and heating under fusable temperature conditions to produce a substantially fully densified shape having ultrapurity and economic processing.

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