Integrated field controlled thyristor structure with...

H - Electricity – 01 – L

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H01L 29/74 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01) H01L 29/423 (2006.01) H01L 29/745 (2006.01) H01L 29/749 (2006.01)

Patent

CA 1225164

AN INTEGRATED FIELD CONTROLLED THYRISTOR STRUCTURE WITH GROUNDED CATHODE Abstract of the Disclosure: A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off.

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