G - Physics – 11 – C
Patent
G - Physics
11
C
352/40, 352/82
G11C 11/34 (2006.01) H01L 21/268 (2006.01) H01L 29/205 (2006.01) H01L 29/49 (2006.01) H01L 29/786 (2006.01) H01L 29/792 (2006.01)
Patent
CA 1211562
-21- RECRYSTALLIZED SILICON-ON-INSULATOR NONVOLATILE MEMORY DEVICE Abstract of the Disclosure Disclosed is a nonvolatile memory device which utilizes a laser beam recrystallized silicon layer having source-channel-drain regions. Underlying the recrystallized layer and separated therefrom by a memory dielectric is a gate in alignment with the source and drain. The gate is formed directly on a substrate of an insulative material (e.g. non-silicon materials. The process of forming the above device comprises forming a conductive polysilicon gate on a substrate followed by a memory nitride layer deposi- tion thereon. A thick oxide layer is formed over the nitride followed by removal of the thick oxide corres- ponding to a central portion of the gate thereby exposing the nitride therebeneath. The exposed ni- tride surface is thermally converted into a thin, stoichiometric memory SiO2. A doped polysilicon layer is then formed on the structure and thereafter conver- ted to recrystallized silicon by subjecting it to laser radiation. The recrystallized silicon is pat- terned into the device active area and a source and drain in alignment with the underlying gate are im- planted therein.
449639
At&t Global Information Solutions Company
Hyundai Electronics America
Na
Symbios Inc.
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