Integrated circuit containing bi-polar and complementary mos...

Details Integrated circuit containing bi-polar and complementary mos... Integrated circuit containing bi-polar and complementary mos...

H - Electricity

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356/125

H01L 27/06 (2006.01) H01L 21/225 (2006.01) H01L 21/331 (2006.01) H01L 21/82 (2006.01) H01L 21/8249 (2006.01)

Patent

CA 1310763

ABSTRACT OF THE DISCLOSURE An integrated circuit containing bipolar and complementary MOS transistors wherein the base and emitter terminals of the bipolar transistor, as well as the gate electrodes of the MOS transistors, are composed of a silicide or of a double layer polysilicon silicide. The base and emitter terminals, as well as the gate electrodes, are arranged in one level of the circuit and there p+ doping or, respectively, n+ doping proceeds by ion implantation in the manufacture of the source/drain zones of the MOS transistors. As a result of the alignment independent spacing between the emitter and the base contact, the base series resistance is kept low and reduction of the space requirement is achieved. Smaller emitter widths are possible by employing the polycide or silicide as diffusion source and as the terminal for the emitter. The size of the since the silicide terminals can be contacted via the field oxide. The integrated semiconductor circuit is employed in VLSI circuits having high switching speeds

541208

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