Method of epitaxially growing gallium arsenide on silicon

Details Method of epitaxially growing gallium arsenide on silicon Method of epitaxially growing gallium arsenide on silicon

C - Chemistry, Metallurgy

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B

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C30B 25/10 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01) C30B 29/42 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1297390

86-3-016 CN METHOD OF EPITAXIALLY GROWING GALLIUM ARSENIDE ON SILICON ABSTRACT Two-step process of expitaxially growing gallium arsenide on a silicon substrate. A silicon substrate is heated to about 450°C in a reaction chamber and arsine and triethylgallium are introduced into the chamber. After a thin seed layer of gallium arsenide is grown at a relatively slow rate, the silicon substrate is heated to about 600°C and a thick buffer layer of gallium arsenide is grown at a relatively fast rate.

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