Method for chemical vapor deposition of copper, silver and...

Details Method for chemical vapor deposition of copper, silver and... Method for chemical vapor deposition of copper, silver and...

C - Chemistry, Metallurgy

23

C

117/83, 204/91.8

C23C 16/18 (2006.01) H01L 21/3205 (2006.01)

Patent

CA 1332036

ABSTRACT OF THE DISCLOSURE Improved processes are described for the deposition of Cu and group IB metals such as Ag and Au. These processes include thermal CVD, photothermal depo- sitions and photochemical deposition. The gaseous precursor which leads to successful deposition of high quality films at low temperatures includes a cyclopentadienyl ring, a two electron donor ligand, and the group IB metal in a +1 oxidation state. In addition, derivatives of the cyclopentadienyl ring can be used where the substituents on the ring include those selected from alkyl groups, halide groups, and psuedohalide groups. In addition, the two electron donor ligand can be selected from the group consisting of trivalent phosphines, amines and arsines. A representative precursor for the deposition of Cu is triethylphosphine cyclopentadienyl copper (I).

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