G - Physics – 11 – B
Patent
G - Physics
11
B
352/29.4
G11B 5/39 (2006.01)
Patent
CA 1253962
MAGNETORESISTIVE READ TRANSDUCER Abstract of the Disclosure A magnetoresistive (MR) read transducer assembly in which the thin film MR layer is longitudinally biased only in the end regions by exchange bias developed by a thin film of antiferromagnetic material that is deposited in direct contact with the MR layer in the end regions. The longi- tudinal bias is of a level sufficient to maintain the end regions of the MR layer in a single domain state and thereby induce a single domain state in the central region of the MR layer. Transverse bias is produced within the central region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductive elements are connected to the MR layer within the central region to define a detection region so that signal output means connected to the conductive elements can determine the resistance changes in the detection region of the MR layer as a function of the fields which are intercepted by the MR layer. This invention relates in general to magnetic transducers for reading information signals from a magnetic medium and, in particular, to an improved magnetoresistive read trans- ducer.
511406
Hitachi Global Storage Technologies Netherlands B.v.
Kerr Alexander
LandOfFree
Magnetoresistive read transducer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistive read transducer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive read transducer will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1326637