Blooming-insensitive image sensor device and method of...

Details Blooming-insensitive image sensor device and method of... Blooming-insensitive image sensor device and method of...

H - Electricity

01

L

345/1

H01L 27/14 (2006.01) H01L 27/148 (2006.01)

Patent

CA 1218443

ABSTRACT Blooming-insensitive image sensor device and method of manufacturing same. An image sensor device comprising a semiconductor substrate (1) having a number of surface-adjoining channel regions (7) which are mutually separated by surface- adjoining channel separation zones (8) and further adjoin a semiconductor zone (9) extending substantially parallel to the surface. The channel regions (7) have a doping concentration which exceeds that of the semiconductor zone ( 9), which in turn exceeds the doping concentration of the semiconductor substrate (1). The semiconductor zone (9) has a thickness which exhibits minima at the area of the centres of the channel regions (7). In such an image sensor device, such a potential variation (20,23,24) can be realized at right angles to the surface that the occurrence of blooming is strongly suppressed. The invention also relates to a method of manufacturing this image sensor device.

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