Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

H - Electricity

01

L

356/149

H01L 21/31 (2006.01) H01L 21/324 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1177582

ABSTRACT METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES A thin film semiconductor device, for example a transistor, is fabricated by depositing layers of materials of appropriate electrical characteristics on an insulating substrate 1. To manufacture a transistor, firstly an insulating base layer 2 is applied which is then followed by a gate electrode 3, an insulation layer 4 and a semiconductor layer 5. Source and drain electrodes 6 and 7 are then applied and finally a protective layer 8 encapsulates the device. In order to improve the life of the device it is annealed firstly in a reducing atmosphere and then in an oxidising atmosphere.

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