Method and apparatus for measuring the ion implant dosage in...

Details Method and apparatus for measuring the ion implant dosage in... Method and apparatus for measuring the ion implant dosage in...

G - Physics

01

N

356/118

G01N 21/84 (2006.01) G01N 21/63 (2006.01) G01R 31/265 (2006.01)

Patent

CA 1262291

ABSTRACT A technique for measuring the ion implant dosage involves method and apparatus for directing pulses of coherent radiation from a laser to the surface of a semiconductor that has been subjected to ion implant. The intensity of the third harmonic reflected from the semiconductor is determined and correlated to determine the ion dosage within the semiconductor.

552742

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