Polycrystalline silicon diode with metal silicide contact

Details Polycrystalline silicon diode with metal silicide contact Polycrystalline silicon diode with metal silicide contact

H - Electricity

01

L

356/31, 352/81.1

H01L 29/86 (2006.01) H01L 21/285 (2006.01) H01L 29/04 (2006.01)

Patent

CA 1198832

POLYCRYSTALLINE SILICON DIODE WITH METAL SILICIDE CONTACT Abstract of the Disclosure A method of fabricating a diode in an integrated circuit structure includes the steps of depositing a layer of N conductivity type polycrystalline silicon 12 on an underlying insulating substrate 10, depositing a layer of metal silicide 15 on the N type layer 12, forming a layer of insulating material 18 on top the metal silicide 15, provid- ing an opening 20 to the N type layer through the insulating layer 18 and the metal silicide 15, forming insulating material 18 over the edges of the metal silicide 15 in the opening 20, and depositing a layer of P conductivity type polycrystalline silicon 22 across the opening 20 in contact with the N conductivity type polycrystalline silicon 12. An ohmic connection to the layer of metal silicide type provides a connection to the N type region. A diode in an integrated circuit includes a sub- strate 10, a first layer of N type polycrystalline silicon 12 deposited on the substrate, a layer of electrically conductivity material 15 deposited on the N type poly- crystalline silicon 12 except where the diode is desired, and a region of P conductivity type polycrystalline silicon 22 deposited in contact with the N conductivity type poly- crystalline silicon 12 in the selected region, and every- where separated from the layer of electrically conductive material 15 by insulating material 18.

414201

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