Photoresist material

Details Photoresist material Photoresist material

C - Chemistry, Metallurgy

08

F

402/258, 402/372

C08F 12/06 (2006.01) C08F 2/00 (2006.01) C08F 10/00 (2006.01) C08F 12/34 (2006.01) C08F 32/00 (2006.01) C08F 110/00 (2006.01) C08F 112/06 (2006.01) C08F 112/34 (2006.01) C08F 132/00 (2006.01) C08F 210/00 (2006.01) C08F 212/06 (2006.01) C08F 212/34 (2006.01) C08F 232/00 (2006.01) C08G 59/00 (2006.01) C08G 59/34 (2006.01) C08G 65/14 (2006.01) G03F 7/038 (2006.01)

Patent

CA 1202148

ABSTRACT OF THE DISCLOSURE The photoresist material comprises a polymer having chloromethyl groups introduced therein and containing 2-isopropenyl- naphthalene as one component, an average substitution degree of the chloromethyl groups based on the polymer is within a range of 0.2 to 5. The photoresist material has a high glass transition point, a high sensitivity to radiation and an excellent dry etching resistance, whereby it is suitably used for the manufacture of a semiconductor element using radiation and provides a good resolution on etching.

429204

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