Substantially pore-free shaped articles of polycrystalline...

Details Substantially pore-free shaped articles of polycrystalline... Substantially pore-free shaped articles of polycrystalline...

C - Chemistry, Metallurgy

04

B

25/133, 261/6

C04B 35/56 (2006.01) C04B 35/575 (2006.01) C04B 35/593 (2006.01)

Patent

CA 1184573

ABSTRACT OF THE DISCLOSURE The invention is substantially pore-free shared articles consisting essentially of polycrystalline silicon nitride and polycrystalline silicon carbide in the form of a homogeneous microstructure having grain sizes of not more than 10 µm manufactured from mixtures of Si3N4 powder and SiC powder in a weight ratio of from 5 : 95 : to 95 : 5 without the con- comitant use of sintering aids by isostatic hot pressing in a vacuum-sealed casing at temperatures of from 1800 to 2200°C and a pressure of from 100 to 400 MPa.

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