Liquid-phase-epitaxy deposition method in the manufacture of...

Details Liquid-phase-epitaxy deposition method in the manufacture of... Liquid-phase-epitaxy deposition method in the manufacture of...

H - Electricity

01

L

148/2.55

H01L 21/20 (2006.01) C30B 19/02 (2006.01)

Patent

CA 1326624

LIQUID-PHASE-EPITAXY DEPOSITION METHOD IN THE MANUFACTURE OF DEVICES Abstract Epitaxial layers are grown from a body of molten material which includes flux and layer constituent components; included in the flux are lead oxide and a small amount of boron trioxide. As compared with prior-art processing in the absence of boron trioxide, enhanced yield is realized as believed to be due to reduced adhesion of solidifying material entrained upon withdrawal of a substrate after growth. The method is particularly useful in the manufacture of magnetic domain devices designed to operate at extreme temperatures, as well as in the manufacture of magneto-optic devices such as, e.g., switches, modulators, and isolators.

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