Photoanodes made from photoresponsive amorphous...

H - Electricity – 01 – L

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345/23, 204/80.5

H01L 31/04 (2006.01) C25B 1/00 (2006.01) H01G 9/20 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01) H01M 14/00 (2006.01)

Patent

CA 1202107

ABSTRACT A photoresponsive amorphous semiconductor ma- terial is modified by incorporating at least one compensating agent selected from 3 group consist- ing of hydrogen, lithium, fluorine, beryllium, aluminum, boron, magnesium, other Group I ele- ments, and compounds of these elements. The semi- conductor material is cathodically treated either simultaneously with or subsequent to this modifi- cation. The semiconductor material may be addi- tionally modified by incorporating a second modi- fying agent selected from a group consisting of silicon, the transition elements, the lanthanides, and compounds of these elements. The semicon- ductor material also may be subjected to heat treatment in an inert atmosphere before the ca- thodic treatment. A photoanode utilizing the above described semiconductor material further includes a sub- strate to support a film of said material. The photoanode may additionally include a second semi- conductor film having a small band gap inserted between said substrate and said first semicon- ductor film. These photoanodes may be used in an electrochemical cell for the conversion of light into electrical energy or energy stored in a fuel.

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