Use of alkylphosphines and alkylarsines in ion implantation

Details Use of alkylphosphines and alkylarsines in ion implantation Use of alkylphosphines and alkylarsines in ion implantation

C - Chemistry, Metallurgy

30

B

356/176, 148/3

C30B 31/22 (2006.01) H01L 21/265 (2006.01)

Patent

CA 1320105

30,602 USE OF ALKYLPHOSPHINES AND ALKYLARSINES IN ION IMPLANTATION ABSTRACT OF THE DISCLOSURE Liquid alkylphosphines and alkylarsines are used as the ion source for improved ion implantation in the doping of semiconductor materials. A higher proportion of the total beam current is obtained as phosphorus and arsenic ion beam current in comparison with the use of gaseous phosphine and arsine, respectively, as the ion sources. Tertiarybutylphosphine and isobutylphosphine are the most preferred alkylphosphines, and tertiarybutyl- arsine is the most preferred alkylarsine for this use.

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