Photodetector with isolated avalanche region

Details Photodetector with isolated avalanche region Photodetector with isolated avalanche region

H - Electricity

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H01L 27/14 (2006.01) H01L 31/00 (2006.01) H01L 31/107 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1228663

-11- PHOTODETECTOR WITH ISOLATED AVALANCHE REGION ABSTRACT OF THE DISCLOSURE The invention relates to an avalanche photo- detector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region and having a higher concentration zone and a surrounding peripheral zone and a second region overlying the first region. The high electric field in the avalanche region is then restricted to the higher conductivity central zone thereby reducing the electric field at the detector surfaces when a reverse-bias voltage sufficient to produce avalanche multiplication is applied to the detector.

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