Method for making short channel transistor devices

Details Method for making short channel transistor devices Method for making short channel transistor devices

H - Electricity

01

L

356/149

H01L 21/28 (2006.01) H01L 21/302 (2006.01)

Patent

CA 1168765

Levinstein, H.?. 28 - 10 - METHOD FOR MAKING SHORT CHANNEL TRANSISTOR DEVICES Abstract of the Disclosure An oxide coating on the top and side surfaces of a polycrystalline silicon gate electrode is anisotropically etched at the same time that an oxide coating on the source and drain regions is etched, whereby the oxide is completely removed from the source and drain regions but not from the top or side surface of the gate electrode.

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