Electronic coatings having low dielectric constant

Details Electronic coatings having low dielectric constant Electronic coatings having low dielectric constant

B - Operations, Transporting

05

D

B05D 1/38 (2006.01) B05D 3/02 (2006.01) B05D 3/12 (2006.01) B05D 5/12 (2006.01) B05D 7/26 (2006.01) H01L 21/316 (2006.01) H01L 23/532 (2006.01)

Patent

CA 2239356

This invention is a method for producing insoluble coatings having a dielectric constant (Dk) of 2.5 to 2.8 on electronic substrates. The method comprises applying a composition comprising hydrogen silsesquioxane resin onto a substrate to form a film on the substrate; and heating the substrate at a temperature of 200°C. to 550°C. wherein the substrate is heated at a rate and for a time sufficient to produce an insoluble coating having a dielectric constant of 2.5 to 2.8.

L'invention porte sur une méthode de production de revêtements insolubles ayant une constante diélectrique (Dk) de 2,5 à 2,8 sur des substrats électroniques. La méthode consiste à appliquer une composition comprenant une résine de silsesquioxane d'hydrogène sur un substrat afin d'y produire une pellicule; et chauffer le substrat à une température variant de 200 à 550 degrés Celsius. Le substrat doit être chauffé à la température choisie pendant suffisamment longtemps pour produire un revêtement insoluble dont la constante diélectrique varie de 2,5 à 2,8.

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