H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/22 (2006.01)
Patent
CA 2076913
Abstract of the Disclosure: A superconducting device which comprises a substrate, an extremely thin superconducting channel formed of an oxide superconductor thin film on the principal surface of the substrate. The superconducting device comprises a superconducting source electrode and a superconducting drain electrode of a relatively thick thickness which are formed of the oxide superconductor on the superconducting channel separated from each other but electrically connected through the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconducting source electrode and the superconducting drain electrode. The superconducting device also comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel. The superconducting device further comprises an oxide layer or oxide layers having an extremely thin thickness between the superconducting channel and the gate insulator and/or between the superconducting channel and the substrate, which are formed of an oxide which improves at most surface/interface of the oxide superconductor thin film which constitutes the superconducting channel.
Iiyama Michitomo
Tanaka So
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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