Plasma immersion ion implantation using conductive mesh

H - Electricity – 01 – J

Patent

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Details

H01J 37/32 (2006.01) A61M 1/10 (2006.01) A61M 1/12 (2006.01) C08J 3/28 (2006.01) C23C 14/20 (2006.01) C23C 14/48 (2006.01) C23C 14/50 (2006.01) H01J 37/09 (2006.01) H01J 37/20 (2006.01) H01J 37/30 (2006.01) H01J 37/317 (2006.01)

Patent

CA 2543666

A plasma processor (5) for modifying at least a region of a surface of a component (1); wherein the component (1) is bombarded by ions from a gas plasma environment (4); and the ions are drawn towards the component (1) by a voltage source applied to a first mesh (3). The first mesh (3) is a stationary non-conformal mesh (3), and the component (1) does not contact the first mesh (3). The component (1) is moved (2) in the vicinity of the first mesh (3) to evenly expose it to ion bombardment (4).

La présente invention concerne un dispositif de traitement au plasma (5) conçu pour modifier au moins une région d'une surface d'un composant (1), dans lequel le composant (1) est bombardé par des ions provenant d'un environnement de plasma gazeux (4), et dans lequel les ions sont attirés en direction du composant (1) par une source de tension appliquée à un premier treillis (3). Ce premier treillis (3) est un treillis fixe non conforme (3), et le composant (1) n'entre pas en contact avec ce premier treillis (3). Le composant (1) est déplacé (2) au voisinage du premier treillis (3) de manière à exposer celui-ci uniformément au bombardement ionique (4).

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